(barrier semiconductor)

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• Barrier metal — A barrier metal is a material used in integrated circuits to chemically isolate semiconductors from soft metal interconnects, while maintaining an electrical connection between them. For instance, a layer of barrier metal must surround every… …   Wikipedia

• barrier layer — noun : the surface of contact between a semiconductor (as cuprous oxide) and a metal (as copper) that acts as an alternating current rectifier or photovoltaic cell when included in a circuit * * * barrier layer (electronics) see ↑depletion layer… …   Useful english dictionary

• Schottky barrier — A Schottky barrier is a potential barrier formed at a metal semiconductor junction which has rectifying characteristics, suitable for use as a diode. The largest differences between a Schottky barrier and a p n junction are its typically lower… …   Wikipedia

• Dielectric barrier discharge — (DBD) is the electrical discharge between two electrodes separated by an insulating dielectric barrier. Originally called silent (inaudible) discharge and also known as ozone production discharge[1] or partial discharge,[2] it was first reported… …   Wikipedia

• Metal–semiconductor junction — In solid state physics, a metal–semiconductor junction is a type of junction in which a metal comes in close contact with a semiconductor material. Similar to a p n junction, it has rectifying properties. History The rectification property of… …   Wikipedia

• Metal-semiconductor junction — is a type of junction in which a metal comes in close contact with a semiconductor material. Similar to a p n junction, it has rectifying properties. History The rectification property of metal semiconductor contacts was discovered by Ferdinand… …   Wikipedia

• Surface-barrier transistor — The surface barrier transistor is a type of transistor developed by Philco in 1953 as an improvement to the alloy junction transistor and the earlier point contact transistor. Like the modern schottky transistor, it offered much higher speed than …   Wikipedia

• Heterostructure barrier varactor — diode The Heterostructure barrier varactor (HBV) diode was invented by Erik Kollberg together with Anders Rydberg in 1989 at Chalmers University of Technology. This semiconductor diode has an anti symmetric current voltage relationship and a… …   Wikipedia

• N-type semiconductor — N type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in silicon). This creates an excess of negative (n type) electron charge… …   Wikipedia

• metal-semiconductor field-effect transistor — Šotkio lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. metal Schottky field effect transistor; metal semiconductor field effect transistor; Schottky barrier gate field effect transistor vok. Feldeffekttransistor mit… …   Radioelektronikos terminų žodynas

• Schottky barrier —   A cell barrier established as the interface between a semiconductor, such as silicon, and a sheet of metal.   Solar Electric Glossary …   Energy terms